(China (Mainland))
Product Summary
The GT60N321 is a Silicon N Channel IGBT. It is suitable for High Power Switching Applications and The 4th Generation.
Parametrics
GT60N321 absolute maximum ratings: (1)Collector-Emitter Voltage VCES 1000 V; (2)Gate-Emitter Voltage VGES 25 V; (3)Collector Current ICP 120; (4)Emitter-Collector Forward Current 1 ms IECFP 120 A; (5)Collector Power Dissipation PC 170 W; (6)Junction Temperature Tj 150 °C; (7)Storage Temperature Tstg 55~150 °C; (8)Screw Torque 0.8 Nm.
Features
GT60N321 features: (1)FRD included between emitter and collector; (2)Enhancement-mode; (3)High speed IGBT : tf = 0.25 μs (typ.) (IC = 60 A) FRD : trr = 0.8 μs (typ.) (di/dt = ?20 A/μs); (4)Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 GT60N321 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
 |
GT60N321(Q) |
Toshiba |
IGBT Transistors IGBT 1000V 60A |
Data Sheet |
|
|
||||||||||||
