(China (Mainland))
Product Summary
The BSC080N03LSG is a Power-MOSFET.
Parametrics
BSC080N03LSG absolute maximum ratings: (1)Pulsed drain current, ID,pulse: 212A; (2)Avalanche current, single pulse, I AS: 45; (3)Avalanche energy, single pulse E AS: 15 mJ; (4)Reverse diode dv /dt: 6 kV/μs; (5)Gate source voltage VGS: ±20 V.
Features
BSC080N03LSG features: (1)The Fast switching MOSFET for SMPS; (2)Optimized technology for DC/DC converters; (3)Qualified according to JEDEC1) for target applications; (4)N-channel; Logic level; (5)Excellent gate charge x R DS(on) product (FOM); (6)Very low on-resistance R DS(on); (7)Superior thermal resistance; (8)Avalanche rated; (9)Pb-free plating; RoHS compliant; (10)Halogen-free according to IEC61249-2-21.
Diagrams
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 BSC080N03LSG |
Infineon Technologies |
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