Product Summary
The S29GL128N11TFI010 is a 128 Megabit, 3.0 volt-only page mode flash memory featuring 110 nm MirrorBit Process Technology. The S29GL128N11TFI010 is organized as 8,388,608 words or 16,777,216 bytes. The device has a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The device can be programmed either in the host system or in standard EPROM programmer.
Parametrics
S29GL128N11TFI010 absolute maximum ratings: (1)Storage Temperature, Plastic Packages:–65 to +150℃; (2)Ambient Temperature with Power Applied: –65 to +125℃; (3)Voltage with Respect to Ground, VCC (Note 1) –0.5 V to +4.0 V; (4)VIO:–0.5 V to +4.0 V; (5)A9, OE#, and ACC (Note 2): –0.5 V to +12.5 V; (6)All other pins (Note 1):–0.5 V to VCC + 0.5V; (7)Output Short Circuit Current (Note 3): 200 mA.
Features
S29GL128N11TFI010 features: (1)Single power supply operation; (2)Enhanced VersatileI/O control; (3)Manufactured on 110 nm MirrorBit process technology; (4)Secured Silicon Sector region; (5)Flexible sector architecture; (6)Compatibility with JEDEC standards; (7)100,000 erase cycles per sector typical; (8)20-year data retention typical; (9)Low power consumption (typical values at 3.0 V, 5 MHz); (10)Package options—56-pin TSOP, 64-ball Fortified BGA.
Diagrams
S29GL016A |
Other |
Data Sheet |
Negotiable |
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S29GL01GP |
Other |
Data Sheet |
Negotiable |
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S29GL01GP11FAIR10 |
Spansion |
Flash IC 1GIG 3.0V FLSHMEM |
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S29GL01GP11FAIR20 |
Spansion |
Flash 1GB 3.0-3.6V 110ns |
Data Sheet |
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S29GL01GP11FFCR10 |
Spansion |
Flash 1GB 3.0-3.6V 110ns PBF |
Data Sheet |
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S29GL01GP11FFCR20 |
Spansion |
Flash 1GB 3.0-3.6V 110ns PBF |
Data Sheet |
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