Product Summary

The BSM15GD120DN2 is a 1200V IGBT power module.

Parametrics

BSM15GD120DN2 aboslute maximum ratings: (1)Collector-emitter voltage:1200 V; (2)Collector-gate voltage RGE = 20 kΩ:1200V; (3)Gate-emitter voltage VGE:± 20V; (4)DC collector current: TC = 25℃:25A, TC = 80℃:15A; (5)Pulsed collector current, tp = 1 ms:TC = 25℃:50A,TC = 80℃:30A; (6)Power dissipation per IGBT TC = 25℃:145W; (7)Chip temperature:+ 150℃; (8)Storage temperature:-40℃ to + 125℃.

Features

BSM15GD120DN2 features: (1)Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.

Diagrams

BSM15GD120DN2 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MX25L12845E
MX25L12845E
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Data Sheet
Negotiable 
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IC FLASH SER 128MB 104MHZ 16SOP
Data Sheet
0-1: $2.01
1-10: $1.82
10-50: $1.78
50-100: $1.59
100-250: $1.59
250-500: $1.53
500-1000: $1.45
1000-2500: $1.44
2500-5000: $1.29
MX25L12845EZNI-10G
MX25L12845EZNI-10G

IC FLASH SER 128MB 104MHZ 8WSON
Data Sheet
0-1: $2.20
1-10: $1.99
10-50: $1.94
50-100: $1.74
100-250: $1.73
250-500: $1.67
500-1000: $1.58
1000-2500: $1.57
2500-5000: $1.41