Product Summary

The HMC349MS8G is a high isolation non-reflective DC to 4 GHz GaAs MESFET SPDT switch in a low cost 8 lead MSOP8G surface mount package with an exposed ground paddle. The HMC349MS8G is ideal for cellular/PCS/3G basestation applications yielding 50 to 60 dB isolation, low 0.8 dB insertion loss and +52 dBm input IP3. Power handling is excellent up through the 3.5 GHz WLL band with the switch offering a P1dB compression point of +31 dBm. On-chip circuitry allows a single positive voltage control of 0/+5 Volts at very low DC currents. An enable input (EN) set to logic high will put the switch in an all off state. The applications of the HMC349MS8G are (1)Basestation Infrastructure; (2)MMDS & 3.5 GHz WLL; (3)CATV/CMTS; (4)Test Instrumentation.

Parametrics

HMC349MS8G absolute maximum ratings: (1)RF Input Power (Vctl = 0V/+5V) (0.25 - 4 GHz): +30 dBm (T = +85 °C); (2)Supply Voltage Range (Vdd) +7 Vdc; (3)Control Voltage Range (Vctl) -1V to Vdd +1V; (4)Hot Switch Power Level (Vdd = +5V) +30 dBm; (5)Channel Temperature 150 °C; (6)Continuous Pdiss (T = 85 °C) (derate 12 mW/°C above 85 °C) 0.75 W; (7)Thermal Resistance 87 °C/W; (8)Storage Temperature -65 to +150 °C; (9)Operating Temperature -40 to +85 °C.

Features

HMC349MS8G features: (1)High Isolation: 70 dB @ 1 GHz; 57 dB @ 2 GHz; (2)Single Positive Control: 0/+5V; (3)+52 dBm Input IP3; (4)Non-Reflective Design; (5)All Off State; (6)Ultra Small MS8G SMT Package: 14.8 mm2.

Diagrams

HMC349MS8G block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
HMC349MS8G
HMC349MS8G
Other

Data Sheet
Negotiable 
HMC349MS8GE
HMC349MS8GE

IC GAAS MESFET SW SPDT 8MSOP
Data Sheet
0-1: $3.95
1-10: $3.56
10-25: $3.24